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| PD - 9.1561A PRELIMINARY l l l l l l IRF9952 HEXFET(R) Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 N-Ch P-Ch VDSS 30V -30V 2 7 3 6 4 5 P -C H A N N E L M O S F E T RDS(on) 0.10 0.25 T o p V iew Recommended upgrade: IRF7309 or IRF7319 Lower profile/smaller equivalent: IRF7509 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 44 2.0 3.5 2.8 16 1.7 N-Channel Maximum P-Channel 30 20 -2.3 -1.8 -10 -1.3 2.0 1.3 57 -1.3 0.25 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range A W mJ A mJ V/ ns 5.0 -5.0 -55 to + 150 C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol RJA Limit 62.5 Units C/W 8/25/97 IRF9952 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 30 -30 -- -- -- -- -- -- 1.0 -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. -- -- -- -- 0.015 -- 0.015 -- 0.08 0.10 0.12 0.15 0.165 0.250 0.290 0.400 -- -- -- -- 12 -- 2.4 -- -- 2.0 -- -2.0 -- 25 -- -25 -- 100 6.9 14 6.1 12 1.0 2.0 1.7 3.4 1.8 3.5 1.1 2.2 6.2 12 9.7 19 8.8 18 14 28 13 26 20 40 3.0 6.0 6.9 14 190 -- 190 -- 120 -- 110 -- 61 -- 54 -- Units V V/C Conditions VGS = 0V, I D = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 2.2A VGS = 4.5V, ID = 1.0A VGS = -10V, ID = -1.0A VGS = -4.5V, I D = -0.50A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 15V, ID = 3.5A VDS = -15V, ID = -2.3A VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VDS = -24V, VGS = 0V, TJ = 125C VGS = 20V N-Channel ID = 1.8A, VDS = 10V, VGS = 10V nC P-Channel ID = -2.3A, VDS = -10V, VGS = -10V N-Channel VDD = 10V, ID = 1.0A, RG = 6.0, RD = 10 ns P-Channel VDD = -10V, ID = -1.0A, RG = 6.0, RD = 10 N-Channel V GS = 0V, VDS = 15V, = 1.0MHz pF P-Channel V GS = 0V, VDS = -15V, = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V S IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance A nA Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -- -- 1.7 -- -- -1.3 A -- -- 16 -- -- 16 -- 0.82 1.2 T J = 25C, IS = 1.25A, VGS = 0V V -- -0.82 -1.2 TJ = 25C, IS = -1.25A, V GS = 0V -- 27 53 N-Channel ns -- 27 54 T J = 25C, IF =1.25A, di/dt = 100A/s -- 28 57 P-Channel nC -- 31 62 T J = 25C, IF = -1.25A, di/dt = 100A/s Repetitive rating; pulse width limited by Notes: Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 23 ) Surface mounted on FR-4 board, t 10sec. N-Channel ISD 2.0A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -1.3A, di/dt 84A/s, VDD V(BR)DSS , TJ 150C N-Channel Starting TJ = 25C, L = 22mH RG = 25, IAS = 2.0A. (See Figure 12) P-Channel Starting TJ = 25C, L = 67mH RG = 25, IAS = -1.3A. N-Channel IRF9952 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT OM 3.0V TOP 100 I D , Dra in-to -S o u rce Cu rre n t (A ) 10 I D , Dra in-to -S o u rce Cu rre n t (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT OM 3.0V TOP 100 10 3.0V 20 s P U LSE W IDTH TJ = 25 C A 0.1 1 10 3 .0V 20 s P U LSE W IDTH TJ = 15 0C A 0.1 1 10 1 1 V D S , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ource Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , D r ain- to-S ourc e C urre nt (A ) I S D , R e v e rse D ra in C u rre n t (A ) 10 10 T J = 2 5 C T J = 1 5 0 C T J = 1 50 C T J = 2 5C 1 1 3.0 3.5 4.0 4.5 VD S = 1 0 V 2 0 s PU L SE W ID TH 5.0 5.5 6.0 A 0.1 0.4 0.6 0.8 1.0 VG S = 0 V 1.2 A 1.4 V G S , Ga te-to-S o urce V oltage (V ) V S D , Source-to-D rain V oltage (V ) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF9952 2.0 N-Channel I D = 2.2A R DS(on) , Drain-to-Source On Resistance (Normalized) 1.5 RDS (on) , Drain-to-Source On Resistance () 0.12 0.10 V G S = 4.5V 1.0 0.08 0.5 V G S = 10V 0.06 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.04 0 2 4 6 8 10 12 A TJ , Junction Temperature ( C) I D , D rain C ur rent (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.16 100 RDS (on) , Drain-to-Source On Resistance () TOP 0.14 E A S , Single Pulse Avalanche Energy (mJ) 80 BOTTOM ID 0.89A 1.6A 2.0A 0.12 0.10 0.08 60 I D = 3 .5A 0.06 40 0.04 20 0.02 0.00 0 3 6 9 12 15 A 0 25 50 75 100 125 A 150 V G S , G ate -to-S ource V oltage (V) Starting T ,JJunction Temperature (C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current N-Channel 350 IRF9952 ID = 1.8A VDS = 10V VGS , Gate-to-Source Voltage (V) A 300 V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d 20 16 C , C a p a c ita n c e (p F ) 250 C is s C os s 200 12 150 8 100 C rss 4 50 0 1 10 100 0 0 2 4 6 8 10 V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9952 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V TOP P-Channel 100 -I D , D ra in -to -S o u rc e C u rre n t (A ) 10 -I D , D ra in -to -S o u rc e C u rre n t (A ) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V TOP 10 1 1 -3.0 V -3 .0V 0.1 0.1 1 20 s P U LSE W IDTH TJ = 25 C A 10 0.1 0.1 1 20 s P U LSE W IDTH TJ = 15 0C A 10 -VD S , D rain-to-S ource V oltage (V ) -VD S , D rain-to-S ource V oltage (V ) Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics 100 100 - I D , D ra in-t o-S o urc e C urre nt (A ) 10 -I S D , R e ve rs e D ra in C u rre n t (A ) 10 TJ = 2 5 C T J = 1 5 0 C 1 T J = 15 0C TJ = 2 5C 1 0.1 3.0 4.0 5.0 V DS = -1 0 V 2 0 s P U L S E W ID T H 6.0 7.0 8.0 A 0.1 0.4 0.6 0.8 1.0 VG S = 0 V 1.2 A 1.4 -VG S , Ga te-to-S o urce V oltage (V ) -VS D , S ource-to-Drain V oltage (V ) Fig 14. Typical Transfer Characteristics Fig 15. Typical Source-Drain Diode Forward Voltage P-Channel IRF9952 2.5 2.0 ID = -1.0A R DS(on) , Drain-to-Source On Resistance (Normalized) RDS(on) , Drain-to-Source On Resistance ( ) 2.0 1.5 1.5 1.0 V G S = -4.5V 1.0 0.5 0.5 V G S = -10V 0.0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 A TJ , Junction Temperature ( C) -I D , D rain C urrent (A ) Fig 16. Normalized On-Resistance Vs. Temperature Fig 17. Typical On-Resistance Vs. Drain Current RDS(on) , Drain-to-Source On Resistance ( ) 0.80 150 EAS , Single Pulse Avalanche Energy (mJ) 120 ID -0.58A -1.0A BOTTOM -1.3A TOP 0.60 90 0.40 I D = -2.3A 60 0.20 30 0.00 0 3 6 9 12 15 A 0 25 50 75 100 125 150 -V G S , G ate -to-S ource V oltage ( V) Starting TJ , Junction Temperature ( C) Fig 18. Typical On-Resistance Vs. Gate Voltage Fig 19. Maximum Avalanche Energy Vs. Drain Current IRF9952 400 P-Channel -V GS, Gate-to-Source Voltage (V) V GS C iss C rs s C os s = = = = 0V , f = 1MH z C gs + C g d , Cds S H OR TED Cgd C ds + C gd 20 ID = -2.3A VDS = -10V 16 C , C a p a c ita n c e (p F ) 300 C iss C os s 200 12 8 100 C rs s 4 0 1 10 100 A 0 0 2 4 6 8 10 -VD S , Drain-to-Source V oltage (V) Q G, Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 (Z thJA ) 0.50 0.20 10 0.10 Thermal Response 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9952 Package Outline SO8 Outline IN C H E S D -B- M IL L IM E T E R S M IN 1 .3 5 0 .1 0 0 .3 6 0 .1 9 4 .8 0 3 .8 1 M AX 1 .7 5 0 .2 5 0 .4 6 0 .2 5 4 .9 8 3 .9 9 D IM 5 M IN .0 5 3 2 .0 0 4 0 .0 1 4 .0 0 7 5 .1 8 9 .1 5 0 M AX .0 6 8 8 .0 0 9 8 .0 1 8 .0 0 9 8 .1 9 6 .1 5 7 A 6 5 H 0.25 (.01 0) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0.10 (.0 04) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .0 5 0 B A S IC .0 2 5 B A S IC .2 2 8 4 .0 1 1 0 .1 6 0 .2 4 4 0 .0 1 9 .050 8 1 .2 7 B A S IC 0 .6 3 5 B A S IC 5 .8 0 0 .2 8 0 .4 1 0 6 .2 0 0 .4 8 1 .2 7 8 -C B 8X 0.2 5 (.01 0) A1 M CASBS L RE CO M ME NDE D FO O TP RINT 0 .72 (.02 8 ) 8X N O TE S : 1. DIM ENS IO NIN G A ND TOL ERA NC ING PE R A N SI Y14 .5M -1982 . 2. CO NTRO LLIN G DIM E NSIO N : INC H. 3. DIM ENS IO NS ARE SH OW N IN MILLIME TE RS (IN CHE S) . 4. OU TL INE CO N FO RMS TO JE DE C O U TLINE M S-0 12A A. 5 DIM EN SION DO E S NO T IN CLU DE MO L D P RO TRUS IO NS MO LD P RO TRUS IO NS N O T TO EX CEE D 0.25 (.006). 6 DIM EN SION S IS THE LE NG TH OF LE AD FO R SO L DER ING TO A SUB S TRA TE .. 6.46 ( .25 5 ) 1.78 ( .070 ) 8X 1.27 ( .050 ) 3X Part Marking Information SO8 E X A M P LE : TH IS IS A N IR F 7 101 D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X W AFER LO T C O D E (LA S T 4 D IG IT S ) 3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O F 7 101 T OP PART NUMBER B O T TO M IRF9952 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) T ER M IN A L N U M B E R 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E ED D IR E C T IO N N O TE S: 1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R. 2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ). 3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 . 33 0. 00 (12 .99 2) M A X. 1 4. 40 ( .5 66 ) 1 2. 40 ( .4 88 ) N O T ES : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 |
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